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<article article-type="research-article" dtd-version="1.3" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xml:lang="ru"><front><journal-meta><journal-id journal-id-type="publisher-id">cvmet</journal-id><journal-title-group><journal-title xml:lang="ru">Известия вузов. Цветная металлургия</journal-title><trans-title-group xml:lang="en"><trans-title>Izvestiya. Non-Ferrous Metallurgy</trans-title></trans-title-group></journal-title-group><issn pub-type="ppub">0021-3438</issn><issn pub-type="epub">2412-8783</issn><publisher><publisher-name>НИТУ МИСИС</publisher-name></publisher></journal-meta><article-meta><article-id pub-id-type="doi">10.17073/0021-3438-2023-4-48-59</article-id><article-id custom-type="elpub" pub-id-type="custom">cvmet-1519</article-id><article-categories><subj-group subj-group-type="heading"><subject>Research Article</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="ru"><subject>Металловедение и термическая обработка</subject></subj-group><subj-group subj-group-type="section-heading" xml:lang="en"><subject>Physical Metallurgy and Heat Treatment</subject></subj-group></article-categories><title-group><article-title>Исследование влияния условий напыления системой инвертированных магнетронов на текстуру и остаточные напряжения в четырехслойных Ta/W/Ta/W-покрытиях</article-title><trans-title-group xml:lang="en"><trans-title>Sputtering by inverted magnetrons: influence on the texture and residual stresses in four layer Ta/W/Ta/W coatings</trans-title></trans-title-group></title-group><contrib-group><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0001-9478-6793</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Лозован</surname><given-names>А. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Lozovan</surname><given-names>A. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Александр Александрович Лозован – доктор технических наук, профессор кафедры 1101</p><p>125993, г. Москва, Волоколамское шоссе, 4</p></bio><bio xml:lang="en"><p>Alexandеr A. Lozovan – Dr. Sci. (Eng.), Professor of the Department 1101</p><p>4 Volokolamskiy Prosp., Moscow 125993</p></bio><email xlink:type="simple">loz-plasma@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-0931-2839</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Бецофен</surname><given-names>С. Я.</given-names></name><name name-style="western" xml:lang="en"><surname>Betsofen</surname><given-names>S. Ya.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Сергей Яковлевич Бецофен – доктор технических наук, профессор кафедры 1101</p><p>125993, г. Москва, Волоколамское шоссе, 4</p></bio><bio xml:lang="en"><p>Sergey Ya. Betsofen – Dr. Sci. (Eng.), Professor of the Department 1101</p><p>4 Volokolamskiy Prosp., Moscow 125993</p></bio><email xlink:type="simple">s.betsofen@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0006-6271-2179</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Ленковец</surname><given-names>А. С.</given-names></name><name name-style="western" xml:lang="en"><surname>Lenkovets</surname><given-names>A. S.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Александр Сергеевич Ленковец – кандидат технических наук, ст. преподаватель кафедры 1101</p><p>125993, г. Москва, Волоколамское шоссе, 4</p></bio><bio xml:lang="en"><p>Aleksandr S. Lenkovets – Cand. Sci. (Eng.), Senior Lecturer of the Department 1101</p><p>4 Volokolamskiy Prosp., Moscow 125993</p></bio><email xlink:type="simple">kompozitplasma@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0009-0660-7026</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Шалин</surname><given-names>А. В.</given-names></name><name name-style="western" xml:lang="en"><surname>Shalin</surname><given-names>A. V.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Алексей Владимирович Шалин – кандидат технических наук, доцент кафедры 1102</p><p>125993, г. Москва, Волоколамское шоссе, 4</p></bio><bio xml:lang="en"><p>Alexey V. Shalin – Cand. Sci. (Eng.), Assistant Professor of the Department 1102</p><p>4 Volokolamskiy Prosp., Moscow 125993</p></bio><email xlink:type="simple">shalinaleks@yandex.ru</email><xref ref-type="aff" rid="aff-1"/></contrib><contrib contrib-type="author" corresp="yes"><contrib-id contrib-id-type="orcid">https://orcid.org/0009-0002-3513-8571</contrib-id><name-alternatives><name name-style="eastern" xml:lang="ru"><surname>Иванов</surname><given-names>Н. А.</given-names></name><name name-style="western" xml:lang="en"><surname>Ivanov</surname><given-names>N. A.</given-names></name></name-alternatives><bio xml:lang="ru"><p>Николай Андреевич Иванов – младший научный сотрудник кафедры 1101</p><p>125993, г. Москва, Волоколамское шоссе, 4</p></bio><bio xml:lang="en"><p>Nikolai A. Ivanov – Junior Research Scientist of the Department 1101</p><p>4 Volokolamskiy Prosp., Moscow 125993</p></bio><email xlink:type="simple">el8i7presley@gmail.com</email><xref ref-type="aff" rid="aff-1"/></contrib></contrib-group><aff-alternatives id="aff-1"><aff xml:lang="ru"><institution>Московский авиационный институт (Национальный исследовательский университет)</institution><country>Россия</country></aff><aff xml:lang="en"><institution>Moscow Aviation Institute (National Research University)</institution><country>Russian Federation</country></aff></aff-alternatives><pub-date pub-type="collection"><year>2023</year></pub-date><pub-date pub-type="epub"><day>21</day><month>08</month><year>2023</year></pub-date><volume>29</volume><issue>4</issue><fpage>48</fpage><lpage>59</lpage><permissions><copyright-statement>Copyright &amp;#x00A9; Лозован А.А., Бецофен С.Я., Ленковец А.С., Шалин А.В., Иванов Н.А., 2023</copyright-statement><copyright-year>2023</copyright-year><copyright-holder xml:lang="ru">Лозован А.А., Бецофен С.Я., Ленковец А.С., Шалин А.В., Иванов Н.А.</copyright-holder><copyright-holder xml:lang="en">Lozovan A.A., Betsofen S.Y., Lenkovets A.S., Shalin A.V., Ivanov N.A.</copyright-holder><license xml:lang="ru" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>Данная работа распространяется под лицензией Creative Commons Attribution 4.0.</license-p></license><license xml:lang="en" license-type="creative-commons-attribution" xlink:href="https://creativecommons.org/licenses/by/4.0/" xlink:type="simple"><license-p>This work is licensed under a Creative Commons Attribution 4.0 License.</license-p></license></permissions><self-uri xlink:href="https://cvmet.misis.ru/jour/article/view/1519">https://cvmet.misis.ru/jour/article/view/1519</self-uri><abstract><p>Исследованы возможности нанесения с высокой скоростью осаждения многослойных покрытий на изделия сложной формы с помощью инвертированных магнетронов. Рентгеновским методом обратных полюсных фигур и методом «sin2Ψ» оценивали формирование текстуры и остаточных напряжений в магнетронных четырехслойных  Ta/W/Ta/W-покрытиях,  нанесенных при напряжениях от 0 до –200 В на цилиндрическую и плоскую подложки из меди, имитирующие элементы поверхности изделий сложной формы. Показано, что закономерности формирования текстуры в покрытиях зависят в основном от напряжения смещения на подложке (Uп), при этом при Uп = –200 В они отличаются для слоев W и Та. При Uп = –100 В реализуется эпитаксиальный механизм текстурообразования, который в случае цилиндрической подложки приводит к интенсивной (111) текстуре всех четырех слоев, а в случае плоской – к формированию во всех слоях монокристальной (111) текстуры с шириной текстурного максимума 12°–14°. Наличие монокристальной (111) текстуры тантала соответствует максимальным значениям модуля Юнга и, соответственно, сил межатомной связи нормально плоскости покрытия, что предполагает у многослойных покрытий с внешним Та-слоем высокие трибологические характеристики. Увеличение напряжения на плоской подложке от 0 до –200 В приводит к повышению остаточных сжимающих напряжений от 0,5 до 2,7 ГПа для исследуемого четырехслойного покрытия.</p></abstract><trans-abstract xml:lang="en"><p>The aim of the study is to examine the possibilities of sputtering of multilayer coatings at a high rate of deposition on products of complex shape using inverted magnetrons. The formation of texture and residual stresses in magnetron four-layer Ta/W/Ta/W coatings deposited at voltages from 0 to –200 V on cylindrical and flat copper substrates imitating elements of the surface of complex shape products was evaluated using the X-ray method of inverse pole figures and the sin2Ψ method. The patterns of texture formation in coatings depend mainly on the bias voltage on the substrate (Us), while at Us = –200 V they differ for W and Ta layers. At Us = –100 V, the epitaxial mechanism of texture formation is realized. In the case of a cylindrical substrate, this leads to intense texture (111) of all four layers. In the case of a flat substrate, this can lead to the formation of a single-crystal texture (111) in all layers with a texture maximum width of 12°–14°. The presence of a single-crystal (111) tantalum texture corresponds to the maximum Young moduli and, accordingly, the interatomic bonding forces normal to the coating plane. This suggests that multilayer coatings with an external Ta layer have high tribological characteristics. Increasing the voltage on a flat substrate from 0 to –200 V leads to an increase in residual compressive stresses from 0.5 to 2.7 GPa for the four-layer coating under study.</p></trans-abstract><kwd-group xml:lang="ru"><kwd>Ta/W/Ta/W-покрытия</kwd><kwd>метод «sin2Ψ»</kwd><kwd>текстура</kwd><kwd>остаточные напряжения</kwd><kwd>напряжение смещения</kwd></kwd-group><kwd-group xml:lang="en"><kwd>Ta/W/Ta/W coatings</kwd><kwd>«sin2Ψ» method</kwd><kwd>texture</kwd><kwd>residual stresses</kwd><kwd>bias voltage</kwd></kwd-group><funding-group><funding-statement xml:lang="ru">Работа выполнена при финансовой поддержке Российского научного фонда (грант № 22-19-00754)</funding-statement><funding-statement xml:lang="en">This research was supported by the Russian Science Foundation (grant no. 22-19-00754)</funding-statement></funding-group></article-meta></front><back><ref-list><title>References</title><ref id="cit1"><label>1</label><citation-alternatives><mixed-citation xml:lang="ru">Dooho Choi, Bincheng Wang, Suk Chung, Xuan Liu, Amith Darbal, Adam Wise, Noel T. 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